DocumentCode :
1914040
Title :
Thorough evaluation of Hot-Carrier Induced Degradation in Deep Submicron Thin-film UNIBOND and SIMOX N-MOSFETs
Author :
Renn, S.H. ; Jomaah, J. ; Balestra, F. ; Raynaud, C.
Author_Institution :
LPCS/ENSERG/INPG, Grenoble, France
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
252
Lastpage :
255
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503536
Link To Document :
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