DocumentCode :
1914050
Title :
DC Characterization of Ga0.51In0.49P/GaAs Insulated-Gate Inverted-Structure HEMT Grown by Gas Source Molecular Beam Epitaxy (GSMBE)
Author :
Lu, S.S. ; Huang, C.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
455
Lastpage :
458
Abstract :
In this paper, a Ga0.51In0.49P/GaAs insulated-gate inverted structure HEMT (I2HEMT) was fabricated and investigated. It showed negligible deep-trap effect at low temperatures due to the low DX centers in GalnP. High drain-to-source breakdown voltage (10V) was obtained by using the GalnP insulated layer.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electric breakdown; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor growth; DC characterization; GSMBE; Ga0.51In0.49P-GaAs; I2HEMT growth; deep-trap effect; drain-to-source breakdown voltage; gas source molecular beam epitaxy; insulated layer; insulated-gate inverted-structure HEMT growth; low DX center; voltage 10 V; Dielectrics and electrical insulation; Electric breakdown; Gallium arsenide; Gas insulation; HEMTs; Optical materials; PHEMTs; Photonic band gap; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435543
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1914050
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