DocumentCode

1914060

Title

Extraction of the apparent electron lifetime in the base of Si/Si(1-x)Ge(x) Heterojunction Bipolar Transistors

Author

Assous, M. ; Mouis, M.

Author_Institution

France Telecom, Meylan, France

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

256

Lastpage

259

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

conf

Filename

1503537