A composite gate turn-off thyristor model and its application

Author

He, Xiangning ; Williams, B.W. ; Green, T.C.

Author_Institution

Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Riccarton, Edinburgh, UK

fYear

1993

fDate

2-8 Oct 1993

Firstpage

1202

Abstract

The authors present a composite gate turn-off thyristor model, which is based on the combination of the p-n-p and n-p-n transistor models. PSPICE simulations and parametric sensitivity analysis are performed with the composite model, and calculated results are given. Results show that it corresponds statically and dynamically with the practical device and, in particular, at turn-off. The model, together with a MOSFET model on the gate, has been applied to a MOS controlled thyristor. The simulated results for this model are also presented

Keywords

SPICE; digital simulation; insulated gate field effect transistors; power transistors; semiconductor device models; sensitivity analysis; thyristor applications; MOS controlled thyristor; MOSFET model; PSPICE simulations; composite gate turn-off thyristor model; n-p-n transistor models; p-n-p transistor models; parametric sensitivity analysis; Analytical models; Circuit simulation; Equations; MOSFETs; P-n junctions; Performance analysis; Power electronics; Resistors; Switches; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE

Conference_Location

Toronto, Ont.

Print_ISBN

0-7803-1462-X

Type

conf

DOI

10.1109/IAS.1993.299050

Filename

299050