A 21.08 dBm Q-band power amplifier in 90-nm CMOS process

Author

Peng Huang ; Kaizhe Guo ; Yiming Yu ; Kai Kang

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents a Q-band four stage power amplifier (PA) fabricated by 90nm CMOS process. In order to improve the output power of the PA, an eight-way distributed active transformer was used for power combining. The simulated insertion loss of the transformer power combiner is less than 1dB at 45 GHz. This paper also shows a way to design transformer baluns for impedance matching. The measurement results of the PA show that the power amplifier achieved 21.08 dBm saturation output power, 20.38 dB small-signal gain and 14.5% power-added-efficiency (PAE) at 45 GHz with 1.2V supply. The entire PA core occupies 0.83mm² die area. And the 3dB bandwidth of the PA is extended from 43 GHz to 47 GHz.

Keywords

CMOS analogue integrated circuits; baluns; field effect MIMIC; impedance convertors; impedance matching; millimetre wave power amplifiers; power combiners; CMOS process; PA; Q-band four stage power amplifier; efficiency 14.5 percent; eight-way distributed active transformer; frequency 45 GHz; gain 20.38 dB; impedance matching; simulated insertion loss; size 90 nm; transformer balun design; transformer power combiner; voltage 1.2 V; Gain; Gain measurement; Impedance matching; Metals; Power amplifiers; Power generation; Power measurement; CMOS; Power amplifier (PA); Q-band; transformer balun; transformer power combiner;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864234

Filename

6864234