Title :
A Q-band CMOS LNA with noise cancellation
Author :
Kai Yi ; Qingyou Zheng ; Yiming Yu ; Kai Kang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
In this paper, a Q-band CMOS low noise amplifier (LNA) exploiting transformer positive-negative feedback and noise cancelling is presented. The proposed low noise amplifier consists of a positive transformer feedback to achieve noise-reduction and a negative transformer feedback to obtain good reverse isolation and stability. The noise cancellation technique is applied in this LNA to achieve a low noise figure. This LNA has been fabricated by standard commercial 90 nm technology. Based on measurements, this proposed LNA achieve a voltage gain of 11.5 dB, a noise figure of 6.5 dB and an input P1dB of -18 dBm. It consumes 11.5 mA from a 1.2 V supply and the total area of this design is 0.6*0.7 mm2.
Keywords :
CMOS analogue integrated circuits; circuit feedback; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; Q-band CMOS LNA; current 11.5 mA; gain 11.5 dB; low noise amplifier; low noise figure; noise cancellation technique; noise figure 6.5 dB; noise-reduction; reverse isolation; size 90 nm; transformer positive-negative feedback; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Millimeter wave technology; Noise cancellation; Noise figure; CMOS; Q-band; feedback; low noise amplifier; millimeter wave; noise cancelling; transformer;
Conference_Titel :
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location :
X´ian
DOI :
10.1109/IEEE-IWS.2014.6864235
