Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

Author

Couso, Carlos ; Pascual, Elena ; Galeote, José M. ; Martín, María J. ; Rengel, Raúl

Author_Institution

Appl. Phys. Dept., Univ. of Salamanca, Salamanca, Spain

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a detailed investigation of the impact of dopant segregation (DS) on the static characteristics performance of n-type 120-nm ultrathin-body Schottky-barrier (SB) silicon-on-insulator MOSFETs. The optimization of the dopant concentration (N_DOP) and lateral extension (L_DOP) of the DS layer is studied. A careful choice of these quantities reduces the effective potential barrier height at the Schottky junctions, boosting the drive current and transconductance. Important effects are also observed in internal quantities related to electronic transport like velocity, energy and carrier concentration within the channel. These enhancements in SB-MOSFET devices featuring DS layers confirm the suitability of this technology to help extending the roadmap for Silicon MOS devices.

Keywords

MOSFET; Schottky gate field effect transistors; SB-MOSFET device; Schottky junction; Schottky-barrier n-MOSFET; carrier concentration; dopant concentration; dopant segregation layer; electronic transport; internal quantities; potential barrier height; silicon MOS device; static characteristics; transconductance; ultrathin-body Schottky-barrier silicon-on-insulator MOSFET; velocity; Doping; Logic gates; MOSFETs; Metals; Monte Carlo methods; Schottky barriers; Transconductance; Schottky Barrier MOSFET; dopant-segregation layer; field emission; static characteristics;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188919

Filename

6188919