Title :
Unified model for electrical and optical characteristics of a Transistor Laser with InGaAs quantum well and dot in GaAs base
Author :
Basu, Rikmantra ; Mukhopadhyay, Bratati ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
Abstract :
A synthesis is made of the optical model for a quantum well (QW) and a quantum dot (QD) laser using Fermi golden rule and the electrical model based on continuity equation for a Transistor Laser. The calculated values of threshold base current and light power for InGaAs QW embedded in GaAs base agree with the experimental value. The predicted threshold base current for Quantum Dots is an order of magnitude lower.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; quantum well lasers; transistors; Fermi golden rule; InGaAs-GaAs; continuity equation; electrical model; light power; optical model; quantum dot laser; quantum well laser; threshold base current; transistor laser; Heterojunction bipolar transistors; Laser modes; Masers; Mathematical model; Photonics; Quantum dot lasers;
Conference_Titel :
General Assembly and Scientific Symposium, 2011 XXXth URSI
Conference_Location :
Istanbul
Print_ISBN :
978-1-4244-5117-3
DOI :
10.1109/URSIGASS.2011.6050667
