• DocumentCode
    1914259
  • Title

    Data Retention in SOI-DRAM with Trench Capacitor Cell

  • Author

    Hanafi, Hussein I. ; Kanarsky, T. ; Schmitz, Stefan ; Hathorn, Kevin

  • Author_Institution
    IBM Corporation, Yorktown Heights, NY, United States
  • fYear
    1998
  • fDate
    8-10 Sept. 1998
  • Firstpage
    276
  • Lastpage
    279
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Conference_Location
    Bordeaux, France
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503542