DocumentCode
1914291
Title
Thermal Simulation of High Power Transistors and MIC and a New Flip-Chip Technology
Author
Vorobiev, A.A. ; Galdetskiy, A.V. ; Ippolitov, V.M.
Author_Institution
FSUE "Istok", Moscow
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
67
Lastpage
68
Abstract
The results of thermal simulation of high power microwave transistor are presented. It is shown that the main part of thermal resistance is determined by GaAs crystal. The new design of the transistor and mounting technology are presented which allow to enhance transistor thermal resistance, to increase the chip thickness and decrease its dimensions.
Keywords
III-V semiconductors; flip-chip devices; gallium arsenide; microwave transistors; thermal resistance; flip-chip technology; high power microwave transistors; mounting technology; thermal simulation; transistor thermal resistance; Gallium arsenide; HEMTs; MESFETs; Microwave integrated circuits; Power transistors; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368628
Filename
4368628
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