Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System

Author

Zetterling, Carl-Mikael ; Östling, Mikael

Author_Institution

Solid State Electron., R. Inst. of Technol., Kista, Sweden

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

497

Lastpage

500

Abstract

This paper describes the fabrication of polysilicon / SiO₂ / 6H silicon carbide structures with four different types of thin gate oxides. Wet and dry thermal oxidation, plasma-enhanced chemical vapor deposition (PECVD), and also an alternative method, oxidation of e-beam evaporated silicon, have been investigated. The four oxides were compared using capacitance-voltage measurements and breakdown field measurements. Breakdown fields exceeded 8 MV/cm for the thermal oxides, which is higher than previously published values.

Keywords

MOSFET; capacitance measurement; oxidation; plasma CVD; silicon compounds; voltage measurement; MOSFET; SiO₂; breakdown field measurements; capacitance-voltage measurements; dry thermal oxidation; electrical properties; plasma-enhanced chemical vapor deposition; silicon carbide system; thin gate oxides; wet thermal oxidation; Capacitance measurement; Chemical vapor deposition; Electric breakdown; Fabrication; MOSFETs; Oxidation; Plasma chemistry; Plasma measurements; Plasma properties; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435552