DocumentCode
1914301
Title
The Nonlinear Model for 8W Phemt Submicron Gate Lengh of R&PC Istok
Author
Krasnik, V.A. ; Manchenko, L.V. ; Pashkovskii, A.B. ; Potapova, T.I. ; Pchelin, V.A.
Author_Institution
Fed. State Unitary Corp. R&PC "lstok", Moscow
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
69
Lastpage
70
Abstract
Nonlinear models had been developed for a sub-micrometer gate with pHEMT\´s developed in R&PC "Istok" and 8 W output power in 3-cm wavelength band. It is shown that this model provided satisfactory agreement between calculated and experimental data.
Keywords
high electron mobility transistors; R&PC Istok; nonlinear model; pHEMT submicron gate length; power 8 W; submicrometer gate; Frequency; Gallium arsenide; HEMTs; PHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368629
Filename
4368629
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