Title :
Study of NBTI Stress in P+-Poly PMOSFETs with Gate Oxides Grown on Nitrogen Implanted Si Substrates
Author :
Chen, Y.Y. ; Kwong, D.L. ; Gardner, M. ; Fulford, J.
Author_Institution :
The University of Texas, Austin, United States
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
