Title :
Cryogenic on-chip high frequency device characterization
Author :
Crozat, P. ; Bouchon, D. ; Henaux, J.C. ; Aniel, F. ; Adde, R. ; Vernet, G.
Author_Institution :
IEF, Univ. Paris-Sud, Orsay, France
Abstract :
A new cryogenic on-chip microwave coplanar probe station is described which extends the frequency range of low temperature high accuracy on-chip measurements in the millimeter range and down to 40K. Measurements on ultrasubmicrometer gatelength HEMTs and high Tc superconductor transmission lines are presented.
Keywords :
cryogenic electronics; high electron mobility transistors; high-temperature electronics; high-temperature superconductors; semiconductor device measurement; cryogenic on-chip high frequency device characterization; cryogenic on-chip microwave coplanar probe station; high Tc superconductor transmission lines; temperature 40 K; ultrasubmicrometer gatelength HEMT; Cryogenics; Frequency measurement; HEMTs; High temperature superconductors; Microwave measurements; Millimeter wave devices; Probes; Superconducting microwave devices; Temperature distribution; Transmission line measurements;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
