DocumentCode
1914489
Title
Technology of MM-Wave Extra Powerful Impatt Diodes with Multimesa Active Structure Design
Author
Tashilov, A.S. ; Dyshekov, A.A. ; Barashev, M.N. ; Bagov, A.N.
Author_Institution
Kabardino-Balkarian State Univ., Nalchik
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
87
Lastpage
88
Abstract
The complex of technological receptions has allowed to solve the problem of producing multimesa mm wave band structures, in which it is possible to reduce thermal resistance in inverse proportion , where n -number of mesa structures. The sectional process engineering has general purpose character and is applicable for the most complicated materials in particular for heterostructures and all types of microwave diodes on their bases, which contain mesa structure.
Keywords
IMPATT diodes; microwave diodes; IMPATT diodes; microwave diodes; multimesa active structure design; thermal resistance reduction; Diodes; Gallium arsenide; National electric code;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location
Crimea
Print_ISBN
978-966-335-012-7
Type
conf
DOI
10.1109/CRMICO.2007.4368637
Filename
4368637
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