Title :
Technology of MM-Wave Extra Powerful Impatt Diodes with Multimesa Active Structure Design
Author :
Tashilov, A.S. ; Dyshekov, A.A. ; Barashev, M.N. ; Bagov, A.N.
Author_Institution :
Kabardino-Balkarian State Univ., Nalchik
Abstract :
The complex of technological receptions has allowed to solve the problem of producing multimesa mm wave band structures, in which it is possible to reduce thermal resistance in inverse proportion , where n -number of mesa structures. The sectional process engineering has general purpose character and is applicable for the most complicated materials in particular for heterostructures and all types of microwave diodes on their bases, which contain mesa structure.
Keywords :
IMPATT diodes; microwave diodes; IMPATT diodes; microwave diodes; multimesa active structure design; thermal resistance reduction; Diodes; Gallium arsenide; National electric code;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368637
