DocumentCode :
19145
Title :
Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices
Author :
Sarkar, Anirban ; Nikonov, Dmitri E. ; Young, Ian A. ; Behin-Aein, Behtash ; Datta, Soupayan
Author_Institution :
Process & Device Modeling Group, Intel Corp., Hillsboro, OR, USA
Volume :
13
Issue :
1
fYear :
2014
fDate :
Jan. 2014
Firstpage :
143
Lastpage :
150
Abstract :
Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. The application of this approach to a wide class of charge-based and noncharge-based devices is discussed. The approach suggests pathways for improving the performance of `beyond-CMOS´ devices and a new realistic limit for energy-delay product in terms of the Planck´s constant.
Keywords :
CMOS integrated circuits; Planck constant; benchmarking performance; beyond-CMOS information processing device; charge-resistance approach; dynamic evolution characteristic; energy-delay product; noncharge-based device; performance metric; CMOS integrated circuits; Delays; Equations; Information processing; Magnetic devices; Performance evaluation; Switches; Benchmarking; beyond-CMOS devices; electronic devices; energy-delay; spintronic devices;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2292796
Filename :
6680683
Link To Document :
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