مرکز منطقه ای اطلاع رساني علوم و فناوري - Design Considerations of High-K Gate Dielectrics and Metal Gate Electrodes for Sub-0.1 um MOSFETs

DocumentCode :

1914519

Title :

Design Considerations of High-K Gate Dielectrics and Metal Gate Electrodes for Sub-0.1 um MOSFETs

Author :

Cheng, Baohong ; Cao, Min ; Voode, P.V. ; Greene, Wayne ; Stork, Hans ; Yu, Zhiping ; Woo, Jason C S

Author_Institution :

University of California, Los Angeles, United States

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

308

Lastpage :

311

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503550

Link To Document :