• DocumentCode
    1914585
  • Title

    The effect on overlay of wafer distortion induced by dielectric reflow process

  • Author

    Rivera, G. ; Clementi, C.

  • Author_Institution
    SGS-Thomson Microelectron., Agrate Brianza, Italy
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    561
  • Lastpage
    564
  • Abstract
    Overlay requirements imposed by ULSI devices scaling down are more and more tight. This makes it necessary to evaluate the influence of any technological step on the lithographic registration process. Using an original method the authors have estimated the impact on the lithographic process of the wafer distortion induced by the different thermal treatments used to planarize interlevel dielectric.
  • Keywords
    ULSI; integrated circuit manufacture; lithography; planarisation; rapid thermal annealing; ULSI device scaling; dielectric reflow process; lithographic registration process; overlay requirements; planarize interlevel dielectric; thermal treatment; wafer distortion; Cooling; Dielectric devices; Dielectric substrates; Distortion measurement; Furnaces; Heating; Implants; Nonlinear distortion; Plasma temperature; Rapid thermal annealing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435563