DocumentCode
1914585
Title
The effect on overlay of wafer distortion induced by dielectric reflow process
Author
Rivera, G. ; Clementi, C.
Author_Institution
SGS-Thomson Microelectron., Agrate Brianza, Italy
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
561
Lastpage
564
Abstract
Overlay requirements imposed by ULSI devices scaling down are more and more tight. This makes it necessary to evaluate the influence of any technological step on the lithographic registration process. Using an original method the authors have estimated the impact on the lithographic process of the wafer distortion induced by the different thermal treatments used to planarize interlevel dielectric.
Keywords
ULSI; integrated circuit manufacture; lithography; planarisation; rapid thermal annealing; ULSI device scaling; dielectric reflow process; lithographic registration process; overlay requirements; planarize interlevel dielectric; thermal treatment; wafer distortion; Cooling; Dielectric devices; Dielectric substrates; Distortion measurement; Furnaces; Heating; Implants; Nonlinear distortion; Plasma temperature; Rapid thermal annealing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435563
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