DocumentCode
1914612
Title
Raman spectroscopy measurement of local stress induced by LOCOS and trench structures in the silicon substrate
Author
De Wolf, Ingrid ; Maes, Herman E. ; Yallup, Kevin
Author_Institution
IMEC, Leuven, Belgium
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
565
Lastpage
568
Abstract
Micro-Raman spectroscopy is used to study local mechanical stress at trench-LOCOS structures. At the trench edges the stress is compressive. The local stress surrounding trench and LOCOS is highly affected when both structures are located close to each other. The stress picture obtained from both planar and cross-sectional experiments agrees very well with stress predicted by finite element calculations.
Keywords
Raman spectra; compressive strength; elemental semiconductors; finite element analysis; oxidation; silicon; LOCOS structures; compressive stress; cross-sectional experiments; finite element calculations; local mechanical stress; local oxidation; microRaman spectroscopy; planar experiments; silicon substrate; trench edges; trench structures; Compressive stress; Finite element methods; Frequency; Gold; Plasma measurements; Raman scattering; Silicon; Spectroscopy; Stress measurement; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435564
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