Title :
"Visual" Design of X-Band Two-Stage MMIC Low-Noise Amplifier
Author :
Babak, L.I. ; Cherkashin, M.V. ; Sheherman, F.I. ; Barov, A.A.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron., Tomsk
Abstract :
An application of a new "visual" technique to design multistage low-noise amplifiers (LNA\´s) is presented. As an example, the design of X-band two-stage MMIC LNA is demonstrated basing on 0.15 mum GaAs p-HEMT technology. The design of multistage microwave LNA\´s is cumbersome and time-consuming process. In this paper we demonstrate an application of a new interactive "visual" technique to design X-band two-stage MMIC LNA. The design procedure consists in the sequential implementation of two main operations for each compensation (CN) and matching (MN) network: (1) determination of acceptable regions (AR\´s) of CN\´s and MN\´s impedances at sample frequencies based on amplifier stage requirements; (2) synthesis of CN\´s and MN\´s from AR\´s. The procedure is implemented in our "visual" CAD tools, AMP, REGION and LOCUS, providing the fast and convenient amplifier design. The amplifier designed is implemented based on 0.15 mum GaAs p-HEMT technology.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit CAD; gallium arsenide; integrated circuit design; low noise amplifiers; AMP; GaAs; LOCUS; REGION; X-band two-stage MMIC low-noise amplifier design; acceptable regions determination; amplifier stage requirements; compensation network; matching network; multistage microwave LNA; p-HEMT technology; sample frequencies; size 0.15 mum; visual CAD tools; visual technique; Gallium arsenide; Low-noise amplifiers; MMICs;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368643
