• DocumentCode
    1914682
  • Title

    Drain current model for bulk strained silicon NMOSFETs

  • Author

    Tinoco, J.C. ; Alvarado, J. ; Martinez-Lopez, A.G. ; Iñiguez, B. ; Cerdeira, A.

  • Author_Institution
    Depto. de Ing. en Telecomun., UNAM, Mexico City, Mexico
  • fYear
    2012
  • fDate
    14-17 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we develop an analytical model to simulate strained silicon NMOSFETs, which allows to describe the drain current. Numerical simulations were performed in order to validate the model, where different technological parameters were considered (e.g. impurity concentrations in Si1-yGey and strained-silicon films). A good agreement with numerical simulations has been obtained.
  • Keywords
    Ge-Si alloys; MOSFET; elemental semiconductors; semiconductor device models; silicon; Si1-yGey; bulk strained silicon NMOSFET; drain current model; impurity concentration; strained-silicon film; Doping; MOSFETs; Numerical models; Numerical simulation; Semiconductor process modeling; Silicon; Silicon germanium; SiGe; Strained-silicon MOSFET; drain current model; modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4577-1116-9
  • Electronic_ISBN
    978-1-4577-1115-2
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2012.6188937
  • Filename
    6188937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914682