Title :
Oscillation Efficiency of Diodes with Al0,3Ga0,7As/GaAs Cathode
Author :
Botsula, O.V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution :
Kharkiv State Univ., Kharkiv
Abstract :
A TED with resonance tunnelling cathode have been considered. It is possible to obtain generation in the diode structure at the expense of TEE and cathode negative resistance. Generation conditions for both mechanisms are determined. Oscillation efficiency and frequency limit have been calculated.
Keywords :
aluminium compounds; gallium arsenide; negative resistance; oscillations; resonant tunnelling diodes; Al0.3Ga 0.7As-GaAs cathode; Al0.3Ga0.7As-GaAs; TED; TEE; cathode negative resistance; diode oscillation efficiency; diode structure; resonance tunnelling cathode; Diodes; Gallium arsenide;
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
DOI :
10.1109/CRMICO.2007.4368648
