• DocumentCode
    1914766
  • Title

    Oscillation Efficiency of Diodes with Al0,3Ga0,7As/GaAs Cathode

  • Author

    Botsula, O.V. ; Prokhorov, E.D. ; Storozhenko, I.P.

  • Author_Institution
    Kharkiv State Univ., Kharkiv
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    111
  • Lastpage
    112
  • Abstract
    A TED with resonance tunnelling cathode have been considered. It is possible to obtain generation in the diode structure at the expense of TEE and cathode negative resistance. Generation conditions for both mechanisms are determined. Oscillation efficiency and frequency limit have been calculated.
  • Keywords
    aluminium compounds; gallium arsenide; negative resistance; oscillations; resonant tunnelling diodes; Al0.3Ga 0.7As-GaAs cathode; Al0.3Ga0.7As-GaAs; TED; TEE; cathode negative resistance; diode oscillation efficiency; diode structure; resonance tunnelling cathode; Diodes; Gallium arsenide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
  • Conference_Location
    Crimea
  • Print_ISBN
    978-966-335-012-7
  • Type

    conf

  • DOI
    10.1109/CRMICO.2007.4368648
  • Filename
    4368648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914766