مرکز منطقه ای اطلاع رساني علوم و فناوري - Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel

DocumentCode :

1914823

Title :

Explanation of the "long distance" Vt roll-off in deep submicron nMOS transistors with Indium channel

Author :

Kubicek, Stefan ; J.Lyu ; Meyer, Kristin De

Author_Institution :

IMEC, Leuven, Belgium

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

368

Lastpage :

371

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503565

Link To Document :