DocumentCode :
1914830
Title :
InP Gunn Diodes with Forward Bias Heterocathode
Author :
Storozhenko, I.P. ; Arkusha, Yu.V. ; Prokhorov, E.D. ; Botsula, O.V.
Author_Institution :
Karazin Kharkov Nat. Univ., Kharkov
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
117
Lastpage :
118
Abstract :
Considered in this paper is the operation of InP Gunn diodes with AlxIn1-xAs, GaxIn1-xAs and GaxIn1-xP cathodes. Fundamental behaviors and operation specificity for InP TED´s with forward bias have been found.
Keywords :
Gunn diodes; aluminium compounds; arsenic compounds; gallium compounds; indium compounds; phosphorus compounds; AlInAs; GaInAs; GaInP; Gunn diodes; InP; forward bias heterocathode; Cathodes; Diodes; Gunn devices; Indium phosphide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368651
Filename :
4368651
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1914830
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