DocumentCode :
1914869
Title :
Influence of Substrate Purity on Mesfet Parameters
Author :
Martynov, B.Ya. ; Pogorelova, E.V.
Author_Institution :
FSUE RPC Istok, Fryazino
fYear :
2007
fDate :
10-14 Sept. 2007
Firstpage :
121
Lastpage :
122
Abstract :
Shrinking MESFET dimensions lead to increased displacement of current from active layer into substrate, which produces qualitative changes in the types of dependences between MESFET equivalent circuit parameter and electrode potentials.
Keywords :
Schottky gate field effect transistors; equivalent circuits; substrates; MESFET; current displacement; electrode potentials; equivalent circuit parameter; substrate purity; MESFETs; Neodymium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology, 2007. CriMiCo 2007. 17th International Crimean Conference
Conference_Location :
Crimea
Print_ISBN :
978-966-335-012-7
Type :
conf
DOI :
10.1109/CRMICO.2007.4368653
Filename :
4368653
Link To Document :
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