Raman scattering studies on Mn-doped GaN grown by metal organic chemical vapor deposition

Mn-doped GaN epitaxial films were grown by metal organic chemical vapor deposition (MOCVD). Appropriate growth conditions for the growth of high quality films were established by studying Raman scattering spectra of Mn-doped GaN films. And then at the optimal growth conditions, Mn-dopants levels were increased for the growth of heavily Mn-doped GaN films. We found that with increasing Mn-dopants levels, longitudinal optical phonon mode A₁(LO) of films is broadened and shifts towards lower frequency. The possible reason derives from the different bonding strength between Ga-N pairs and Mn-N pairs in the host lattice. In addition, electronic property of Mn-doped GaN was studied. We found that the electronic property of GaN-based DMSs can be adjusted by p- and/or n-dopants.