Performance in RF Power MOSFET´s Device For GSM Radiotelephony.

UHF power MOSFET performances are analysed, in regard to the narrow band 935-960 MHz of the european radio-telephony system GSM. With an output power ranging from 1 to 30W (CW) at 1GHz for available parts, the main large signal characteristics measured at 950 MHz are: a 10 dB power gain , a 17 to 20 dB IMD3 at 1 dB compression, comparable output power and IMD values at high compression (i.e. >; 3dB) for all working classes. It appears class B amplification will be the best choice regarding the trade-off between output power, gain, linearity and efficiency. The properties are analysed using a compact non-linear dynamic model for general circuit simulators such as SPICE or ELDO. Noteworthy, from a parametric study done with, high IMD products are attributed to signal excursions in the ohmic region. This simulation tool happens to be able to deal with small signal, power and high frequency domains. With such a moα*el, general circuit simulators allow as well the study of this kind of devices as the design of RF power amplifiers or power electronics circuits.