Title :
An analytical estimation model for the spreading resistance of Double-Gate FinFETs
Author :
Malheiro, C.T. ; Pereira, A.S.N. ; Giacomini, R.
Author_Institution :
Centro Univ. da FEI, Sao Bernardo do Campo, Brazil
Abstract :
The FinFET spreading resistance is the component of the parasitic resistance of FinFETs caused by the curved shape of the current lines in drain and source regions, close to the junctions. This work proposes a very simple analytical model for the spreading resistance of Double-Gate FinFETs that is valid for any fin width from 16nm, without fitting parameters. The model output was compared to data extracted from numeric simulation and it showed accuracy better than 8% for the considered range of devices with three different doping concentrations.
Keywords :
MOSFET; semiconductor device models; FinFET spreading resistance; analytical estimation model; double-gate FinFET; fin width; fitting parameters; parasitic resistance; very simple analytical model; Current density; Doping; FinFETs; Logic gates; Numerical models; Resistance; Semiconductor process modeling; Double Gate FinFETs; numerical simulation; parasitic resistance; spreading resistance;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188945
