Determination of the ion erosion rate during the SIMS analysis on AlxGa1−xAs as a function of x using HRXRD

Author

Koudriavtseva, O. ; Kudriavtsev, Y. ; Escobosa, A. ; Sánchez-R, V.M.

Author_Institution

Electr. Eng. Dept., Cinvestav-IPN, Mexico City, Mexico

fYear

2012

fDate

14-17 March 2012

Firstpage

1

Lastpage

3

Abstract

An irregular erosion rate in SIMS can lead to erroneous results during depth profiling analysis of semiconductor hetero-structures. In this work the dependence of erosion on the composition of Al_xGA_1-xAs is determined. High resolution X-ray diffraction is used to measure the alloy composition considering the deformation due to a good coupling between substrate and layer. The result shows that the erosion rate is reduced to 70% when the AlAs fraction (x) increases from 0 to 0.65.

Keywords

X-ray diffraction; aluminium compounds; secondary ion mass spectroscopy; Al_xGa_1-xAs; HRXRD; SIMS analysis; depth profiling analysis; high resolution X-ray diffraction; ion erosion rate; secondary ion mass spectroscopy; semiconductor heterostructures; Gallium arsenide; Lattices; Mass spectroscopy; Metals; Reflection; Substrates; X-ray diffraction; AlGaAs; HRXRD; SIMS; erosion rate;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on

Conference_Location

Playa del Carmen

Print_ISBN

978-1-4577-1116-9

Electronic_ISBN

978-1-4577-1115-2

Type

conf

DOI

10.1109/ICCDCS.2012.6188947

Filename

6188947