DocumentCode :
1915007
Title :
Indirect exciton mediated optical transistors
Author :
Wilkes, J.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., Cardiff, UK
fYear :
2013
fDate :
12-16 May 2013
Firstpage :
1
Lastpage :
1
Abstract :
In this contribution, a design for an all-optical excitonic transistor is presented. The purpose of such a device is to perform controlled switching of light using light. This can be achieved using indirect excitons to mediate the interactions between optical signals. Simulations indicate that the design can be successfully implemented in promising new zinc oxide based CQW structures where the high exciton binding energy allows excitonic effects to persist to room temperature.
Keywords :
binding energy; excitons; optical design techniques; optical switches; phototransistors; zinc compounds; CQW structures; ZnO; all-optical excitonic transistor; exciton binding energy; excitons-bound states; indirect excitons; light switching; optical transistors; zinc oxide; Electric potential; Excitons; Integrated optics; Logic gates; Optical attenuators; Performance evaluation; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe (CLEO EUROPE/IQEC), 2013 Conference on and International Quantum Electronics Conference
Conference_Location :
Munich
Print_ISBN :
978-1-4799-0593-5
Type :
conf
DOI :
10.1109/CLEOE-IQEC.2013.6800932
Filename :
6800932
Link To Document :
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