DocumentCode
1915009
Title
Weak inversion models for nMOS gate-all-around (GAA) devices
Author
Francis, P. ; Terao, A. ; Flandre, D. ; van de Wiele, F.
Author_Institution
Lab. de Microelectron., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
621
Lastpage
624
Abstract
Several 1-D analytical models of the potential distribution across the nMOS/GAA device are proposed and compared. The most accurate result is achieved solving the Poisson equation accounting for both the depletion charges and an approximation of the electron density at the surface of the film. The derived analytical expressions of the drain current and the threshold voltage are in good agreement with numerical simulations.
Keywords
MIS devices; MOSFET; Poisson equation; numerical analysis; semiconductor device models; 1D analytical models; GAA devices; Poisson equation; depletion charges; drain current; electron density; film surface; gate-all-around devices; nMOS devices; numerical simulations; threshold voltage; weak inversion; Analytical models; Electrons; Gaussian processes; MOS devices; Medical simulation; Numerical simulation; Poisson equations; Semiconductor films; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435575
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