Title :
Weak inversion models for nMOS gate-all-around (GAA) devices
Author :
Francis, P. ; Terao, A. ; Flandre, D. ; van de Wiele, F.
Author_Institution :
Lab. de Microelectron., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
Several 1-D analytical models of the potential distribution across the nMOS/GAA device are proposed and compared. The most accurate result is achieved solving the Poisson equation accounting for both the depletion charges and an approximation of the electron density at the surface of the film. The derived analytical expressions of the drain current and the threshold voltage are in good agreement with numerical simulations.
Keywords :
MIS devices; MOSFET; Poisson equation; numerical analysis; semiconductor device models; 1D analytical models; GAA devices; Poisson equation; depletion charges; drain current; electron density; film surface; gate-all-around devices; nMOS devices; numerical simulations; threshold voltage; weak inversion; Analytical models; Electrons; Gaussian processes; MOS devices; Medical simulation; Numerical simulation; Poisson equations; Semiconductor films; Silicon; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
