The Influence of Technological Parameters on Ultra-Short Gate SI-NMOS Transistor Performances

Author

Charef, M. ; Dessenne, F. ; Thobel, J.L. ; Baudry, L. ; Fauquembergue, R.

Author_Institution

I.E.M.N., Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

625

Lastpage

628

Abstract

We have studied the effect of technological parameters on the performances of an ultrashort Si-NMOS transistor, at room temperature, using 2D Monte Carlo simulation. Results obtained for a device with source-drain extensions are compared with experiments. Doping profiles of Gaussian form are assumed. The main physical phenomena involved in the device behaviour are described. Additionally, electrical characteristics are analysed (transconductance, threshold voltage, cut-off frequency). Transconductance of 600mS/mm and intrinsic cut-off frequency close to 300Ghz are obtained for a NMOS structure with optimized source drain extensions and 0.07μm gate length.

Keywords

MOSFET; Monte Carlo methods; semiconductor doping; 2D Monte Carlo simulation; doping profiles; electrical characteristics; source-drain extensions; transconductance; ultra short gate Si-NMOS transistor performances; Art; Cutoff frequency; Data mining; Doping profiles; Electric variables; MOS devices; MOSFETs; Temperature; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435576