Title :
Beneficial Contribution of Compositionally In(x)Ga(1-x)As Graded Base on InP Double Heterojunction Bipolar Transistors (DHBT´s) for Very High Speed Transmission Circuits
Author :
Mba, J. ; Benchimol, J.L. ; Duchenois, A.M. ; Riet, M. ; Godin, J. ; Scavennec, A.
Author_Institution :
France Telecom, Bagneux, France
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
