• DocumentCode
    1915055
  • Title

    Physical Modeling Of Nanoelectronic Devices

  • Author

    Abramczyk, E.R. ; Meindl, J.D.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., Stanford, CA, USA
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    629
  • Lastpage
    632
  • Abstract
    An analytic model has been developed for nanoelectronic device analysis. Application of the model to determine the channel length limited by the short channel effect is presented. The analysis indicates for Lch ≲ 150 nm an alternate source-drain junction design is required for room and low temperature operation.
  • Keywords
    nanoelectronics; analytic model; channel length; nanoelectronic device analysis; physical modeling; short channel effect; source-drain junction design; Boundary conditions; Computer interfaces; Cooling; Laplace equations; Nanoscale devices; Poisson equations; Silicon; Temperature; Threshold voltage; Upper bound;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915055