Title :
Issues in the design of Heterojunction Bipolar Transistors for large signal analogue and high effliciency microwave power
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
A review is given of the critical design features in Heterojunction Bipolar Transistors (HBTs) which are important in their application to large signal analogue circuits and high efficiency microwave power modules. The review is illustrated with recent achievements in the design of HBT devices and circuits and the systems applications which are driving their development.
Keywords :
analogue circuits; design; heterojunction bipolar transistors; microwave power transistors; HBT devices; design; heterojunction bipolar transistors; high efficiency microwave power; large signal analogue circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Microwave devices; Multichip modules; Signal design; Temperature; Thermal management;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
