DocumentCode
1915079
Title
Issues in the design of Heterojunction Bipolar Transistors for large signal analogue and high effliciency microwave power
Author
Holden, A.J.
Author_Institution
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
635
Lastpage
642
Abstract
A review is given of the critical design features in Heterojunction Bipolar Transistors (HBTs) which are important in their application to large signal analogue circuits and high efficiency microwave power modules. The review is illustrated with recent achievements in the design of HBT devices and circuits and the systems applications which are driving their development.
Keywords
analogue circuits; design; heterojunction bipolar transistors; microwave power transistors; HBT devices; design; heterojunction bipolar transistors; high efficiency microwave power; large signal analogue circuits; Doping; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Microwave devices; Multichip modules; Signal design; Temperature; Thermal management;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435578
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