DocumentCode :
1915094
Title :
Safe Operating Current Density and Failure modes of Carbon doped base AlGaAs/GaAs HBTs
Author :
Prasad, S.J. ; Hultine, E.
Author_Institution :
Electron. Res. Labs., Tektronix, Beaverton, OR, USA
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
643
Lastpage :
646
Abstract :
The HBTs used in this study were grown by OMVPE. The base was carbon doped to 3×1019 cm-3 with a thickness of 500A. Several 3μ ×10μ HBTs were biased at IC=2, 4 and 10mA (VCE=2V) and maintained at TA=125°C. Based on 1000 hours of operation at 125°C , IC =2mA is safe, 4mA is marginal and 10mA is fatal.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; current density; gallium arsenide; heterojunction bipolar transistors; semiconductor growth; vapour phase epitaxial growth; AlGaAs-GaAs:C; HBT; OMVPE growth; carbon doped base; current 10 mA; current 2 mA; current 4 mA; failure modes; safe operating current density; size 500 A; temperature 125 degC; time 1000 hour; voltage 2 V; Carbon dioxide; Computerized monitoring; Current density; Degradation; Electromagnetic heating; Gallium arsenide; Heterojunction bipolar transistors; Maintenance; Noise measurement; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1915094
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