مرکز منطقه ای اطلاع رساني علوم و فناوري - Study of 1/f Noise in III-V Nitride Based MODFETs at Low Drain Bias

DocumentCode :

1915122

Title :

Study of 1/f Noise in III-V Nitride Based MODFETs at Low Drain Bias

Author :

Ho, W. ; Surya, C. ; Tong, K.Y. ; Kim, W. ; Botcharev, A. ; Morkoç, H.

Author_Institution :

The Hong Kong Polytechnic University, Hung Hom, Hong Kong

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

420

Lastpage :

423

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503578

Link To Document :