DocumentCode :
1915167
Title :
Rapid, On-line Extraction of Base Resistance of HBTs and Correlation with Minimum Noise Figure
Author :
Prasad, S.J. ; Laskar, J.
Author_Institution :
Electron. Res. Labs., Beaverton, OR, USA
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
651
Lastpage :
654
Abstract :
A simple, on-line method of extracting base resistance from measured S-parameters is presented. The measured base resistance correlates very well with fmax and noise parameter data.
Keywords :
S-parameters; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device noise; HBT; S-parameters; base resistance; minimum noise figure; on-line extraction; Capacitance; Circuits; Current measurement; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Noise figure; Noise measurement; Scattering parameters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1915167
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