DocumentCode :
1915214
Title :
Investigation of Transient Effects in SOI MOSFETs at High Temperature
Author :
Augendre, E. ; Pelloie, J.-L. ; Cristoloveanu, S. ; Borel, G.
Author_Institution :
LETI-CEA/Grenoble, France
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
436
Lastpage :
439
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503582
Link To Document :
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