• DocumentCode
    1915226
  • Title

    Highly Efficient, High-Power Pump Diodes from 790nm to 2um

  • Author

    Martinsen, Robert

  • Author_Institution
    NLight Corp., Vancouver, BC
  • fYear
    2006
  • fDate
    5-5 Dec. 2006
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    One of the major limitations to scaling diode laser power is the waste heat in the semiconductor, which can be addressed by improvements in power conversion efficiency. Here we report on the rapid advancement of conversion efficiencies across all commercial pump wavelengths from near- to mid-infrared. The most critical improvements have been the reduction in the diode laser operating voltage through optimization of hetero-barriers, leading to 74% efficient 100 W bars for pumping ytterbium lasers between 915 and 975 nm. We review our efforts at extending high efficiencies to neodymium pump wavelengths at 880, 885 and 808 nm, in addition to shorter wavelengths where we are now achieving over 70% efficiency for pumping thulium lasers around 792 nm. Results will also be presented for high efficiency InP devices for pumping holmium at 1907 nm and erbium at 1470 nm up to 37 W and 100 W per bar, respectively
  • Keywords
    III-V semiconductors; erbium; holmium; indium compounds; neodymium; optical pumping; semiconductor lasers; thulium; ytterbium; 1470 nm; 1907 nm; 74 percent; 808 nm; 880 nm; 885 nm; 915 to 975 nm; Er; Ho; InP; InP devices; Nd; Tm; Yb; holmium laser; neodymium laser; power conversion efficiency; pump diodes; thulium laser; ytterbium laser;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    High Power Diode Pumped Lasers and Systems, 2006. The Institution of Engineering and Technology Seminar on
  • Conference_Location
    London
  • Print_ISBN
    0-86341-753-1
  • Type

    conf

  • Filename
    4126776