Title :
A monolithic 0.35-µm SiGe Class E power amplifier designed at 1.9 GHz
Author :
dos Santos, Antonio Jose S. ; Martins, Everson
Author_Institution :
CCS, UNICAMP, Campinas, Brazil
Abstract :
This paper presents the design of a monolithic 1.9 GHz, Class E, power amplifier (PA) for wireless application with the main components on chip. A cascode topology is used to attenuate transistor stress and to increase the output power, although it compromises the efficiency due to the dissipative process caused by transistor parasitic capacitances. The proposed PA was developed in a single-ended topology because most of the existing components designed use this configuration. The PA was developed in a 0.35-μm SiGe BiCMOS technology with 3.3 Volts which delivers 20.9 dBm output power and 25.5% of power added efficiency (PAE). It also presents a bandwidth of 60 MHz which is suitable for GSM application. Some considerations about the layout are also discussed.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF integrated circuits; UHF power amplifiers; integrated circuit design; semiconductor materials; GSM application; PA design; SiGe; bandwidth 60 MHz; cascode topology; efficiency 25.5 percent; frequency 1.9 GHz; monolithic SiGe class E power amplifier; single-ended topology; size 0.35 mum; transistor parasitic capacitances; transistor stress attenuation; voltage 3.3 V; CMOS integrated circuits; Inductors; Layout; Logic gates; Power amplifiers; Power generation; Transistors; Class E; Power amplifier (PA); low power; output power; power added efficiency (PAE); switching mode; transistor stress; wireless;
Conference_Titel :
Microwave & Optoelectronics Conference (IMOC), 2013 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
DOI :
10.1109/IMOC.2013.6646488
