DocumentCode
1915251
Title
Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors
Author
Mosser, V. ; Contreras, S. ; Aboulhouda, S. ; Lorenzini, Ph ; Kobbi, F. ; Robert, J.L. ; Zekentes, K.
Author_Institution
Schlumberger Montrouge Rech., Montrouge, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
659
Lastpage
662
Abstract
The interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift has been investigated. The physical phenomena responsible for the thermal drift of the Hall sensitivity were reviewed and investigated using a set of test devices with well-controlled structure parameters. These results were used to optimize the structure design. A sensitivity of 900 V/A/T with a temperature coefficient of -160 ppm/°C was obtained.
Keywords
Hall effect devices; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; magnetic sensors; AlGaAs-InGaAs-GaAs; Hall effect magnetic sensors; Hall sensitivity; heterostructures; high performance magnetic sensors; test devices; thermal drift; well-controlled structure parameters; Doping; Electrons; Gallium arsenide; Indium gallium arsenide; Magnetic sensors; Photonic band gap; Physics; Poisson equations; Temperature sensors; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435583
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