Title :
Physics of AlGaAs/InGaAs/GaAs heterostructures for high performance magnetic sensors
Author :
Mosser, V. ; Contreras, S. ; Aboulhouda, S. ; Lorenzini, Ph ; Kobbi, F. ; Robert, J.L. ; Zekentes, K.
Author_Institution :
Schlumberger Montrouge Rech., Montrouge, France
Abstract :
The interest of AlGaAs/InGaAs/GaAs heterostructures for the realization of Hall effect magnetic sensors with a high sensitivity and a low thermal drift has been investigated. The physical phenomena responsible for the thermal drift of the Hall sensitivity were reviewed and investigated using a set of test devices with well-controlled structure parameters. These results were used to optimize the structure design. A sensitivity of 900 V/A/T with a temperature coefficient of -160 ppm/°C was obtained.
Keywords :
Hall effect devices; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; magnetic sensors; AlGaAs-InGaAs-GaAs; Hall effect magnetic sensors; Hall sensitivity; heterostructures; high performance magnetic sensors; test devices; thermal drift; well-controlled structure parameters; Doping; Electrons; Gallium arsenide; Indium gallium arsenide; Magnetic sensors; Photonic band gap; Physics; Poisson equations; Temperature sensors; Testing;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
