• DocumentCode
    1915324
  • Title

    High frequency bipolar transistor on SIMOX

  • Author

    Magnusson, U. ; Norström, H. ; Kaplan, W. ; Zhang, S. ; Jargelius, M. ; Sigurd, D.

  • Author_Institution
    Swedish Inst. of Microelectron., Kista, Sweden
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    683
  • Lastpage
    686
  • Abstract
    A high frequency, double polysilicon bipolar transistor technology on SIMOX is presented. The SOI substrate consists of a conventional SIMOX wafer upon which a twin epi-layer is grown. A high-frequency bipolar transistor technology is then transferred to this substrate. The initial experimental results are presented and show a high cut-off frequency of some 12.4 GHz. A comparison with identical devices fabricated on bulk substrates is also given and indicate that an increase of about 20% in fT can be expected.
  • Keywords
    SIMOX; bipolar transistors; SIMOX wafer; SOI substrate; Si; double polysilicon bipolar transistor technology; frequency 12.4 GHz; high frequency bipolar transistor; twin epilayer; Bipolar transistors; Conductivity; Cutoff frequency; Dielectric materials; Dielectric substrates; Etching; Integrated circuit manufacture; Microelectronics; Oxygen; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1915324