DocumentCode
1915407
Title
Evaluation of CMOS/SOI Devices on Plasma-Thinned Bonded Silicon Wafers
Author
Matloubian, M. ; Pinter, J. ; Aubuchon, K. ; Marsh, O. ; McClain, B. ; Mathur, D.P. ; Feng, T. ; Gardopee, G.
Author_Institution
Hughes Technol. Center, Carlsbad, CA, USA
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
691
Lastpage
694
Abstract
A new type of precision thinned bonded silicon wafer is evaluated for thin film CMOS/SOI applications. SOI wafers with silicon film thickness variations of less than ±2.5 nm are available with choice of substrate doping and buried oxide thickness. CMOS devices fabricated on these wafers have the same carrier mobilities as comparable bulk silicon MOSFETs.
Keywords
CMOS integrated circuits; elemental semiconductors; silicon; silicon-on-insulator; thin film devices; CMOS-SOI devices; SOI wafers; Si; bulk silicon MOSFET; buried oxide thickness; carrier mobilities; plasma-thinned bonded silicon wafers; precision thinned bonded silicon wafer; silicon film thickness variations; silicon-on-insulator technology; substrate doping; thin film CMOS-SOI applications; CMOS technology; Circuits; MOSFETs; Optical films; Plasma applications; Plasma devices; Plasma measurements; Semiconductor films; Silicon; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435590
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