Title :
Self-Heating effects on Static and Dynamic SOI Operation
Author :
Yachou, D. ; Gautier, J. ; Raynaud, C.
Author_Institution :
LETI, CEA - Technol. Av., Grenoble, France
Abstract :
In SOI devices heat evacuation is limited by a buried oxide layer. The consequence is the well known Self Heating (SH) phenomenon [1] [2] [3]. We have in depth analysed the corresponding thermal effects on static and dynamic modes and the implications for the device operation.
Keywords :
buried layers; semiconductor device models; SH phenomenon; SOI devices heat evacuation; buried oxide layer; dynamic SOI operation; dynamic mode; in depth analysis; self heating phenomenon; self-heating effects; static SOI operation; static mode; thermal effects; Attenuation; Decorrelation; Heating; Impact ionization; Nonlinear distortion; Parameter extraction; Proposals; Temperature dependence; Transient analysis; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
