Title :
Low-Noise Amplifiers for WCDMA Base-Station Receiver
Author :
Tikka, T. ; Ryynänen, J. ; Halonen, K.
Author_Institution :
Electron. Circuit Design Lab., Helsinki Univ. of Technol.
Abstract :
This paper describes the design and measurements of two different low-noise amplifiers (LNA) targeted for WCDMA base-station applications. The LNAs are designed to have two gain settings, which are optimized for different base-station configurations. Both designs are implemented using the same 0.25 mum SiGe BiCMOS process, and both designs achieve in high gain mode the NF of 1 dB and IIP3 of -5 dBm
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; code division multiple access; low noise amplifiers; radio receivers; 0.25 micron; 1 dB; BiCMOS process; SiGe; WCDMA base-station receiver; base-station configurations; low-noise amplifiers; wideband code division multiple access; BiCMOS integrated circuits; Dynamic range; Germanium silicon alloys; Linearity; Low-noise amplifiers; Mercury (metals); Multiaccess communication; Noise measurement; Silicon germanium; Topology; Base-station; IIP3; LNA; Low NF; WCDMA;
Conference_Titel :
Norchip Conference, 2006. 24th
Conference_Location :
Linkoping
Print_ISBN :
1-4244-0772-9
DOI :
10.1109/NORCHP.2006.329237
