Title :
A wide tuning range gated voltage-controlled oscillator
Author :
Bowman, T.G. ; Weiss, F.G.
Author_Institution :
TriQuint Semicond. Inc., Beaverton, OR, USA
Abstract :
A wide tuning range voltage controlled oscillator is reported which provides a 10:1 tuning range for a control voltage variation of 2.5 V, with an maximum oscillation frequency of 1.5 GHz. The oscillator is gateable, and the circuit includes a synchronous three-bit counter implemented in source-coupled FET logic. Output levels for the fundamental and counter outputs are ECL compatible. The circuit requires a single -5-V power supply and dissipates 350 mW. The device is fabricated using a 1- mu m-long-gate enhancement/depletion mode GaAs MESFET process that has a nominal FET f/sub T/ of 18 GHz.<>
Keywords :
III-V semiconductors; MMIC; counting circuits; digital integrated circuits; field effect integrated circuits; gallium arsenide; microwave oscillators; variable-frequency oscillators; -5 V; 0.15 to 1.5 GHz; 1 micron; 350 mW; ECL compatible; GaAs; SCFL; VCO; enhancement/depletion mode GaAs MESFET; gated voltage-controlled oscillator; maximum oscillation frequency; ring oscillators; semiconductors; source-coupled FET logic; synchronous three-bit counter; tuning range; wide tuning range; Circuit optimization; Counting circuits; FETs; Frequency; Logic circuits; Logic devices; Power supplies; Tuning; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location :
San Diego, CA, USA
DOI :
10.1109/GAAS.1989.69325
