Title :
A New Intrinsic charge loss analysis on 16 Mb EPROM
Author :
Mondon, F. ; Mazoyer, P. ; Guillaumot, B.
Author_Institution :
J. FOURIER Univ. Grenoble, Grenoble, France
Abstract :
The EPROM charge loss is linked to electron trapping, depending on electric field inside the interpoly dielectric at the end of the programming step. With respect to this behavior, the bottom oxide-nitride interface qualities and trapping properties, together with electron injection from floating gate to the interpoly dielectric during cell programming are key points for 16 Mb EPROM and next generation device reliability improvement.
Keywords :
EPROM; dielectric materials; electron traps; integrated circuit reliability; EPROM; bottom oxide-nitride interface; cell programming; electric field; electron injection; electron trapping; floating gate; interpoly dielectric; intrinsic charge loss; next generation device reliability; storage capacity 16 Mbit; trapping properties; Boron; Charge carriers; Dielectric losses; EPROM; Electron traps; Microelectronics; Nonvolatile memory; Polarization; Temperature distribution; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
