Diffusion-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors by Thermal Stress

Author

Hong, Sungmo ; Kim, Jumin ; Park, Chulsoon ; Lee, Jaejin ; Won, Taeyoung

Author_Institution

Dept. of Electron. Mater. & Devices, Inha Univ., Incheon, South Korea

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

739

Lastpage

742

Abstract

Two-dimensional simulations of the impact of beryllium diffusion at the junction interface of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) on the device performance are reported. It is shown that the current driving capability is greatly influenced by the redistributed profile of beryllium at the emitter-base junction due to outdiffusion. In addition, the dependence of the RP characteristics on the Be outdiffusion is estimated for a series of AlGaAs/GaAs HBTs with different Be distribution.

Keywords

III-V semiconductors; aluminium compounds; beryllium; diffusion; gallium arsenide; heterojunction bipolar transistors; thermal stresses; AlGaAs-GaAs:Be; HBT; RP characteristics; beryllium diffusion; current driving capability; diffusion-induced degradation; emitter-base junction; heterojunction bipolar transistors; thermal stress; two-dimensional simulations; Cities and towns; Doping; Educational institutions; Gallium arsenide; Heterojunction bipolar transistors; High-speed electronics; Laboratories; Thermal degradation; Thermal engineering; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435598