DocumentCode :
1915623
Title :
Performance of 0.2 μm planar doped pseudomorphic and lattice matched HEMTs on GaAs and InP
Author :
Baeyens, Y. ; Skrabka, T. ; Van Hove, M. ; De Raedt, W. ; Nauwelaers, B. ; Van Rossum, M.
Author_Institution :
Div. ESAT-TELEMIC, K.U. Leuven, Leuven, Belgium
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
753
Lastpage :
756
Abstract :
Two types of HEMT transistors with 0.2 μm gatelength have been fabricated: pseudomorphic (PM) on GaAs and lattice matched (LM) on InP. An extensive study of the DC and HF-characteristics shows the higher potential of the InP based devices: extrinsic fT -values up to 141 GHz were obtained. The monolithic integration of the InP LM HEMTs is illustrated by the performance of a coplanar distributed amplifier.
Keywords :
III-V semiconductors; distributed amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor doping; DC characteristics; GaAs-InP; HF characteristics; coplanar distributed amplifier; lattice matched HEMT; planar doped pseudomorphic HEMT; size 0.2 mum; Fabrication; Gallium arsenide; Gold; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MODFETs; Ohmic contacts; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435600
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1915623
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